Session – Characterization
Characterization of Electronic Devices-2
08:30 – 10:00
Deep levels, Defect, NRCs-1
10:30 – 12:00
Processes for Electronic Devices
14:15 – 15:45
Deep levels, Defect, NRCs-2
16:15 – 17:45
Rump Session 1 sponsored by Attolight AG
Energy savings allowed by GaN technologies: myth or reality?
18:00 – 20:00
Session – Novel Materials & Nanostructures
Micro-LEDs
2D and III-Nitride materials
11:00 – 12:00
h-BN UV LED and quantum dots
Photonic devices
Rump Session 2 sponsored by HexaTech inc.
What do we need to do to make III-nitrides surpass SiC in power electronics?
Session – Electronic Devices
ScAlN, charge confinement and trapping
Substrates, field effects, transport
Surface and interface states
AlN based electronic devices
16:15 – 18:00
Session – Optical Devices
UV LEDs : performance
UV LEDs : degradation
Visible laser
UV laser
Session – Growth
Sc/B containing III-nitrides
GaN Crystallization and Defects
GaN Bulk Growth
Doping Applications
Rump Session 3
Quantum technologies and integrated photonic circuits with nitrides
Poster Session 4
12:00 – 14:00
12. Oktober 2022