Session – Electronic Devices
Substrates, field effects, transport

Programm

• 10:30 – 10:45 12 Min. 3 Min.

  • Abstract Talk
  • AT 137

  Electrical characterization of AlGaN/GaN HEMTs fabricated on semi-insulating GaN substrates doped with Fe, C, or Mn

  • Daiki Tanaka (Nagoya University / JP)

   Characterization, Electronic devices
• 10:45 – 11:00 12 Min. 3 Min.

  • Abstract Talk
  • AT 097

  Growth and characterization of AlN buffer high-electron mobility transistor on SiC substrate

  • Minho Kim (Tech University of Korea / KR)

   Electronic devices, Growth
• 11:00 – 11:15 12 Min. 3 Min.

  • Abstract Talk
  • AT 260

  Comparison of AlGaN/GaN high electron mobility transistors grown by MOVPE on 3C-SiC/Si(111), Si(111) and 6H-SiC for RF applications

  • Dr. Yvon Cordier (CRHEA-CNRS / FR)

   Electronic devices, Growth
• 11:15 – 11:30 12 Min. 3 Min.

  • Abstract Talk
  • AT 135

  Space charge profile and carrier transport property in dopant-free GaN-based p-n junction formed by distributed polarization doping

  • Takeru Kumabe (Nagoya University / JP)

   Characterization, Electronic devices
• 11:30 – 11:45 12 Min. 3 Min.

  • Abstract Talk
  • AT 136

  Quasi-vertical p-i-n diodes achieving high breakdown performance with GaN:Be I-layer and current spreading layer

  • Sangho Lee (Georgia Institution of Technology / US)

   Electronic devices, Growth
• 11:45 – 12:00 12 Min. 3 Min.

  • Abstract Talk
  • AT 138

  Vertical GaN transistor with semi-insulating channel

  • P. Šichman (Slovak Academy of Sciences / SK)

   Electronic devices