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Abstract Talk
AT 136

Quasi-vertical p-i-n diodes achieving high breakdown performance with GaN:Be I-layer and current spreading layer

Termin

Datum: 12.10.2022

Zeit: 11:30 – 11:45

Redezeit: 12 Min.

Diskussionszeit: 3 Min.

Ort / Stream:

Salon Rome

Session

Substrates, field effects, transport

Themen

Electronic devices
Growth

Mitwirkende

Sangho Lee (Georgia Institution of Technology / US), Dr. Habib Ahmad (Georgia Institution of Technology / US), Zachary Engel (Georgia Institution of Technology / US), Aheli Ghosh (Georgia Institution of Technology / US), Chris Matthews (Georgia Institution of Technology / US), Prof. Dr. William Alan Doolittle (Georgia Institution of Technology / US)