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Sangho Lee

Georgia Institution of Technology / US

Georgia Institution of Technology

Vortrag

12.10.2022
11:30 – 11:45 12 Min. 3 Min.
Abstract Talk
AT 136
Quasi-vertical p-i-n diodes achieving high breakdown performance with GaN:Be I-layer and current spreading layer
Electronic devices, Growth

Weitere Beteiligungen

11.10.2022
Poster Presentation
PP 284
The effect of Be doping concentration on thermal conductivity of p-type AlN thin films
Characterization, Novel Materials and Nanostructures
12.10.2022
11:30 – 11:45 12 Min. 3 Min.
Abstract Talk
AT 136
Quasi-vertical p-i-n diodes achieving high breakdown performance with GaN:Be I-layer and current spreading layer
Electronic devices, Growth
12.10.2022
17:00 – 17:15 12 Min. 3 Min.
Abstract Talk
AT 180
Realization of AlN homojunction PN diodes
Electronic devices, Growth