IWN 2022

International Workshop on Nitride Semiconductors 2022

Observation of interfacial strain relaxation and electron beam damage thresholds in Al0.3In0.7N/GaN heterostructures by transmission electron microscope

Characterization

Structural Characterization, Growth model-2

Abstract Talk

Growth

Observation compositional modulation variation and reduction in rapidly grown AlGaN self-assembled superlattices by transmission electron microscopy

Poster Presentation

The effect of Be doping concentration on thermal conductivity of p-type AlN thin films

Novel Materials and Nanostructures

Demonstration of Sc0.2Al0.8N HEMT structures with a sheet resistance of 150 Ω/□ and a sheet charge of 5.9x1013 cm-2 with phase pure, metal rich growth

Electronic devices

ScAlN, charge confinement and trapping

Improved nucleation of 111 ScN thin films

Advancements in aluminum indium nitride growth over a wide compositional range – towards long wavelength III-Nitride optoelectronics

Realization of AlN homojunction PN diodes

AlN based electronic devices

Quasi-vertical p-i-n diodes achieving high breakdown performance with GaN:Be I-layer and current spreading layer

Substrates, field effects, transport

Vertical cation segregation during A­x­B1-xN epitaxy

Sc/B containing III-nitrides

p-type AlN based heteroepitaxial diodes with Schottky, PIN and junction barrier Schottky character achieving significant breakdown performance

Salon Rome

MOS Devices

Session

Chair

Very high n and p-type conduction in (Al)GaN including the first demonstration of AlN pn homojunction Diodes

Salon Moskau

Doping

Invited Talk

Invited Speaker

Panel discussion

GaN is already now the material of choice for power conversion up to 650 V. Despite a similar breakdown field as SiC, GaN is not compatible for higher voltages up to 10 kV. The figures of merit predict a really strong performance with experimental results lagging. In the rump session, we will discuss what is currently limiting the performance of GaN based power electronics and how to overcome these limits. Additionally, the nitride family also offers a wider range of materials, e.g., AlGaN and AlN with even wider band gaps with breakdown fields surpassing SiC and even diamond. Theoretically these materials could be the next generation semiconductors for power electronics. We will critically discuss the actions that need to be taken to align theoretical expectations with experimental results. Panelists include experts in GaN power devices, native substrate growth and preparation, AlGaN and AlN power electronics as well as an intimate knowledge of the industry and their requirements for a successful transfer into the market.

Prof. Dr. William Alan Doolittle

Vorsitz

Invited Speaker

Vortrag

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