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IWN 2022
Programm
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Session
Session – Electronic Devices
MOS Devices
Termin
Datum:
11.10.2022
Zeit:
17:15
–
18:00
Ort / Stream:
Salon Rome
Chair
Dr. Frank Brunner
Ferdinand-Braun-Institut / DE
Prof. Dr. William Alan Doolittle
Georgia Institute of Technology / US
Programm
17:15
–
17:30
12 Min.
3 Min.
Abstract Talk
AT 098
Performance improvements of P-channel GaN HFETs by atomic layer etching using nitrogen plasma
Shonosuke Kimura (Tokyo Institute of Technology / JP)
Electronic devices, Novel Materials and Nanostructures
17:30
–
17:45
12 Min.
3 Min.
Abstract Talk
AT 099
Thermally grown Nb-oxide for GaN-based MOS-HEMTs
Navneet Bhardwaj (IIT Bombay / IN)
Professor Dipankar Saha (Indian Institute of Technology Bombay / IN)
Characterization, Electronic devices
17:45
–
18:00
12 Min.
3 Min.
Abstract Talk
AT 100
Trap parameter extraction and compact modeling of non-ideal dynamic performance in AlGaN/GaN HEMTs
Dr. Carlo De Santi (University of Padova / IT)
Characterization, Electronic devices
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