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Advancements in aluminum indium nitride growth over a wide compositional range – towards long wavelength III-Nitride optoelectronics

Termin

Datum:
Zeit:
Redezeit:
Diskussionszeit:
Ort / Stream:
Topic Growth

Session

Growth

Themen

  • Characterization
  • Growth

Mitwirkende

Zachary Engel (Georgia Tech / US), Evan Clinton (Georgia Tech / US), Christopher M. Matthews (Georgia Tech / US), Dr. Habib Ahmad (Georgia Tech / US), Keisuke Motoki (Georgia Tech / US), Prof. Dr. William Alan Doolittle (Georgia Tech / US)

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