Poster Session 3
Growth

Programm

• • Poster Presentation
  • PP 253

  Micro-disc and micro-ribbon shaped InGaN active region fabricated on corrugated substrates

  • Anna Kafar (Polish Academy of Science / PL)

   Growth, Optical devices
• • Poster Presentation
  • PP 254

  Homogeneous InGaN based red emission using a high temperature grown quantum barrier (QB)

  • Dr. Bumjoon Kim (Veeco Instruments Inc. / US)

   Growth, Optical devices
• • Poster Presentation
  • PP 255

  Quasi-van der Waals epitaxial growth of GaN on hexagonal boron nitride by metal-organic chemical vapor deposition

  • Professor Chang-Hee Hong (School of Semiconductor and Chemical Engineering / KR)

   Growth
• • Poster Presentation
  • PP 256

  Sputtering epitaxy of transition metal nitrides and AlScN

  • Christopher Lüttich (OvGU Magdeburg / DE)

   Characterization, Growth
• • Poster Presentation
  • PP 257

  High-quality InGaN quantum pyramids on non-polar GaN nanowire structures emitting at near-IR wafelength

  • Dr. Dae-Young Um (Jeonbuk National University / KR)

   Characterization, Growth
• • Poster Presentation
  • PP 258

  Indium gallium nitride alloys epitaxy in the entire composition range – from surface kinetic mechanisms studies to a concise model

  • Professor Eleftherios Iliopoulos (University of Crete / GR)

   Characterization, Growth
• • Poster Presentation
  • PP 259

  Influence of structural defects in the In_0.3Ga_0.7N/GaN QWs on their evolution during p-type layers growth

  • Ewa Grzanka (Polish Academy of Sciences / PL)

   Growth, Optical devices
• • Poster Presentation
  • PP 260

  Surface planarization effect by Li addition on (20-21) GaN crystal growth in the Na-flux method

  • Hibiki Takahashi (Osaka University / JP)

   Characterization, Growth
• • Poster Presentation
  • PP 261

  Remote heteroepitaxy of GaN on single-layer graphene/AlN using metal-organic chemical vapor deposition

  • Hoe-Min Kwak (Gwangju Institute of Science and Technology / KR)

   Growth, Optical devices
• • Poster Presentation
  • PP 262

  The introduction of intermediate layers for InGaN growth on ScAlMgO₄ through tri-halide vapor phase epitaxy

  • Iori Kobayashi (Tokyo University of Agriculture and Technology / JP)

   Characterization, Growth
• • Poster Presentation
  • PP 263

  Effects of graphene defect on growth modes of GaN on graphene / sapphire substrate

  • Jeongwoon Kim (Gwangju Institute of Science and Technology / KR)

   Characterization, Growth
• • Poster Presentation
  • PP 265

  Multi-step temperature growth process optimization of N-polar GaN and its application to HEMT structures

  • Alexis Papamichail (Linköping university / SE)

   Characterization, Growth
• • Poster Presentation
  • PP 266

  Growth of epitaxial GaN by reactive magnetron sputtering

  • Ralf Borgmann (Otto-von-Guericke-Universität Magdeburg / DE)

   Characterization, Growth
• • Poster Presentation
  • PP 267

  Realization of low dislocation density AlN on PSS by HVPE for DUV LEDs

  • Dr. Seung-Jae Lee (Korea Photonics Technology Institute / KR)

   Growth, Optical devices
• • Poster Presentation
  • PP 268

  Absence of strain relaxation mechanism in thick Al_0.6Ga_0.4N epilayers grown on single-crystal AlN substrates

  • Dr. Shashwat Rathkanthiwar (North Carolina State University / US)

   Characterization, Growth
• • Poster Presentation
  • PP 269

  High growth-rate and thick GaN growth by oxide vapor phase epitaxy method

  • Prof. Dr. Shigeyoshi Usami (Osaka University / JP)

   Electronic devices, Growth
• • Poster Presentation
  • PP 270

  Semipolar pyramidal p-type doped GaN structures for micro-sized photonic device applications

  • Ivan Martinovic (Polar Light Technologies AB / SE)

   Growth, Optical devices
• • Poster Presentation
  • PP 271

  Advancements in aluminum indium nitride growth over a wide compositional range – towards long wavelength III-Nitride optoelectronics

  • Zachary Engel (Georgia Institute of Technology / US)

   Characterization, Growth
• • Poster Presentation
  • PP 272

  Temperature field and fluid flow in ammonothermal growth of GaN during etch-back and crystal growth for a retrograde solubility configuration

  • Dr. Saskia Schimmel (Friedrich-Alexander-Universität Erlangen-Nürnberg / DE)

   Growth