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IWN 2022
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Prof. Dr. Shigeyoshi Usami
Osaka University / JP
Osaka University
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Vortrag
11.10.2022
Poster Presentation
PP 269
High growth-rate and thick GaN growth by oxide vapor phase epitaxy method
Electronic devices, Growth
Weitere Beteiligungen
10.10.2022
Poster Presentation
PP 010
Analysis of dislocations in GaN crystals using defocus convergent-beam electron diffraction (CBED)
Characterization, Growth
11.10.2022
Poster Presentation
PP 260
Surface planarization effect by Li addition on (20-21) GaN crystal growth in the Na-flux method
Characterization, Growth
11.10.2022
Poster Presentation
PP 269
High growth-rate and thick GaN growth by oxide vapor phase epitaxy method
Electronic devices, Growth
12.10.2022
11:30
–
11:45
12 Min.
3 Min.
Abstract Talk
AT 145
Non-destructive characterization of dislocations observed in HVPE GaN grown on Na-flux-grown GaN substrate
Characterization, Growth
12.10.2022
15:00
–
15:15
12 Min.
3 Min.
Abstract Talk
AT 168
Improvement of a GaN crystal quality by isotropic pyramidal growth through low-temperature condition in the Na-flux method
Characterization, Growth
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