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Poster Presentation
PP 269

High growth-rate and thick GaN growth by oxide vapor phase epitaxy method

Termin

Datum: 11.10.2022

Zeit: 18:00 – 18:00

Redezeit: 0 Min.

Diskussionszeit: 0 Min.

Ort / Stream:

Topic Growth

Session

Growth

Themen

Electronic devices
Growth

Mitwirkende

Prof. Dr. Shigeyoshi Usami (Osaka University / JP), Shimizu Ayumu (Osaka University / JP), Professor Masayuki Imanishi (Osaka University / JP), Dr. Junichi Takino (Panasonic Holdings Corporation / JP), Dr. Tomoaki Sumi (Panasonic Holdings Corporation / JP), Yoshio Okayama (Panasonic Holdings Corporation / JP), Mihoko Maruyama (Osaka University / JP), Professor Masashi Yoshimura (Osaka University / JP), Masahiko Hata (Itochu Plastics Inc. / JP), Masashi Isemura (Sosho-Ohshin Inc. / JP), Professor Yusuke Mori (Osaka University / JP)