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The introduction of intermediate layers for InGaN growth on ScAlMgO4 through tri-halide vapor phase epitaxy

Termin

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Topic Growth

Session

Growth

Themen

  • Characterization
  • Growth

Mitwirkende

Iori Kobayashi (Tokyo University of Agriculture and Technology / JP), Ryohei Hieda (Tokyo University of Agriculture and Technology / JP), Hiroto Murata (Tokyo University of Agriculture and Technology / JP), Professor Hisashi Murakami (Tokyo University of Agriculture and Technology / JP)

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