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Ewa Grzanka

Polish Academy of Sciences / PL

Polish Academy of Sciences

Vortrag

11.10.2022
Poster Presentation
PP 218
Indium concentration fluctuations in InGaN/GaN quantum wells grown on sapphire template and on GaN bulk substrate and their relationship with QWs decomposition
Characterization, Growth
11.10.2022
Poster Presentation
PP 259
Influence of structural defects in the In_0.3Ga_0.7N/GaN QWs on their evolution during p-type layers growth
Growth, Optical devices

Weitere Beteiligungen

10.10.2022
14:15 – 14:30 12 Min. 3 Min.
Abstract Talk
AT 002
Origin of anisotropy in partially relaxed InGaN layers and the procedure for strain state analysis
Characterization, Growth
10.10.2022
Poster Presentation
PP 075
Ultra-high-pressure doping of gallium nitride with europium
Growth, Novel Materials and Nanostructures
10.10.2022
Poster Presentation
PP 014
X-ray diffraction used for monitoring InGaN quantum well homogenization and decomposition
Characterization, Growth
10.10.2022
Poster Presentation
PP 012
Effect of point defects diffusion on the efficiency of InGaN quantum wells
Characterization, Growth
11.10.2022
Poster Presentation
PP 125
Comparison of the crystal quality of InGaN/GaN multiple quantum wells grown on sapphire and GaN substrate using X-ray diffraction
Characterization, Growth
11.10.2022
Poster Presentation
PP 164
Summary of studies on the effect of H₂ used during the growth of quantum barriers on InGaN quantum wells
Growth, Optical devices
11.10.2022
Poster Presentation
PP 199
Towards superluminescent diodes with wide emission spectrum – application of new concepts of the active region
Novel Materials and Nanostructures, Optical devices
11.10.2022
Poster Presentation
PP 219
DFT based modeling of point defect diffusion across the In_0.125Ga_0.875N/GaN and In_0.25Ga_0.75N/GaN interfaces
Characterization, Growth
11.10.2022
Poster Presentation
PP 259
Influence of structural defects in the In_0.3Ga_0.7N/GaN QWs on their evolution during p-type layers growth
Growth, Optical devices
11.10.2022
Poster Presentation
PP 218
Indium concentration fluctuations in InGaN/GaN quantum wells grown on sapphire template and on GaN bulk substrate and their relationship with QWs decomposition
Characterization, Growth
12.10.2022
Poster Presentation
PP 315
Modeling of the point defect migration across the AlN/GaN interfaces – ab initio study
Characterization, Growth
12.10.2022
Poster Presentation
PP 334
Investigation of room-temperature sputtered n-type GaN sub-contact layer in ohmic contact to MOCVD-grown GaN:Si films
Characterization, Electronic devices
13.10.2022
09:30 – 09:45 12 Min. 3 Min.
Abstract Talk
AT 205
Effect of point defects below the InGaN/GaN QWs on their structural and optical properties at elevated temperatures
Characterization, Growth