Zurück
  • Poster Presentation
  • PP 219

DFT based modeling of point defect diffusion across the In0.125Ga0.875N/GaN and In0.25Ga0.75N/GaN interfaces

Termin

Datum:
Zeit:
Redezeit:
Diskussionszeit:
Ort / Stream:
Topic Characterization

Session

Characterization

Themen

  • Characterization
  • Growth

Mitwirkende

Roman Hrytsak (Institute of High Pressure Physics "Unipress", PAS / PL; University of Rzeszow / PL), Dr. Pawel Kempisty (Institute of High Pressure Physics "Unipress", PAS / PL), Ewa Grzanka (Institute of High Pressure Physics "Unipress", PAS / PL), Professor Mike Leszczyński (Institute of High Pressure Physics "Unipress", PAS / PL), Professor Malgorzata Sznajder (University of Rzeszow / PL)

  • © Conventus Congressmanagement & Marketing GmbH