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IWN 2022
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Professor Mike Leszczyński
Polish Institute of Science / PL
Polish Institute of Science
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Vortrag
10.10.2022
Poster Presentation
PP 014
X-ray diffraction used for monitoring InGaN quantum well homogenization and decomposition
Characterization, Growth
Weitere Beteiligungen
10.10.2022
Poster Presentation
PP 014
X-ray diffraction used for monitoring InGaN quantum well homogenization and decomposition
Characterization, Growth
11.10.2022
Poster Presentation
PP 125
Comparison of the crystal quality of InGaN/GaN multiple quantum wells grown on sapphire and GaN substrate using X-ray diffraction
Characterization, Growth
11.10.2022
Poster Presentation
PP 164
Summary of studies on the effect of H
2
used during the growth of quantum barriers on InGaN quantum wells
Growth, Optical devices
11.10.2022
Poster Presentation
PP 219
DFT based modeling of point defect diffusion across the In
0.125
Ga
0.875
N/GaN and In
0.25
Ga
0.75
N/GaN interfaces
Characterization, Growth
12.10.2022
Poster Presentation
PP 315
Modeling of the point defect migration across the AlN/GaN interfaces – ab initio study
Characterization, Growth
13.10.2022
09:30
–
09:45
12 Min.
3 Min.
Abstract Talk
AT 205
Effect of point defects below the InGaN/GaN QWs on their structural and optical properties at elevated temperatures
Characterization, Growth
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