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Professor Mike Leszczyński

Polish Institute of Science / PL

Polish Institute of Science

Speaker

10/10/2022
Poster Presentation
PP 014
X-ray diffraction used for monitoring InGaN quantum well homogenization and decomposition
Characterization, Growth

Further involvements

10/10/2022
Poster Presentation
PP 014
X-ray diffraction used for monitoring InGaN quantum well homogenization and decomposition
Characterization, Growth
11/10/2022
Poster Presentation
PP 125
Comparison of the crystal quality of InGaN/GaN multiple quantum wells grown on sapphire and GaN substrate using X-ray diffraction
Characterization, Growth
11/10/2022
Poster Presentation
PP 164
Summary of studies on the effect of H₂ used during the growth of quantum barriers on InGaN quantum wells
Growth, Optical devices
11/10/2022
Poster Presentation
PP 219
DFT based modeling of point defect diffusion across the In_0.125Ga_0.875N/GaN and In_0.25Ga_0.75N/GaN interfaces
Characterization, Growth
12/10/2022
Poster Presentation
PP 315
Modeling of the point defect migration across the AlN/GaN interfaces – ab initio study
Characterization, Growth
13/10/2022
09:30 – 09:45 12 Min. 3 Min.
Abstract Talk
AT 205
Effect of point defects below the InGaN/GaN QWs on their structural and optical properties at elevated temperatures
Characterization, Growth