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Comparison of the crystal quality of InGaN/GaN multiple quantum wells grown on sapphire and GaN substrate using X-ray diffraction

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Topic Characterization

Session

Characterization

Topics

  • Characterization
  • Growth

Authors

Dr. Byeongchan So (Karlsruhe Institute of Technology (KIT) / DE), Dr. Sondes Bauer (Karlsruhe Institute of Technology (KIT) / DE), Ewa Grzanka (Polish Academy of Sciences / PL), Professor Vaclav Holý (Charles University / CZ; Masaryk University / CZ), Professor Mike Leszczyński (Polish Academy of Sciences / PL), Professor Tilo Baumbach (Karlsruhe Institute of Technology (KIT) / DE)

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