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Poster Presentation
PP 164

Summary of studies on the effect of H₂ used during the growth of quantum barriers on InGaN quantum wells

Termin

Datum: 11.10.2022

Zeit: 13:15 – 13:15

Redezeit: 0 Min.

Diskussionszeit: 0 Min.

Ort / Stream:

Topic Growth

Session

Growth

Themen

Growth
Optical devices

Mitwirkende

Dr. Robert Czernecki (TopGaN Ltd. / PL), Ewa Grzanka (TopGaN Ltd. / PL), Artur Lachowski (Institute of High Pressure Physics PAS / PL), Dr. Grzegorz Staszczak (Institute of High Pressure Physics PAS / PL), Dr. Szymon Grzanka (Institute of High Pressure Physics PAS / PL), Professor Mike Leszczyński (TopGaN Ltd. / PL)

Summary of studies on the effect of H2 used during the growth of quantum barriers on InGaN quantum wells

Termin

Session

Themen

Mitwirkende

Summary of studies on the effect of H₂ used during the growth of quantum barriers on InGaN quantum wells