Poster Session 2
Growth

Programm

• • Poster Presentation
  • PP 151

  Tuning of Ab initio reaction rate in GaN metalorganic vapor phase epitaxy by multiobjective genetic algorithm with high-resolution mass spectrometry data

  • Dr. Akira Kusaba (Kyushu University / JP)

   Characterization, Growth
• • Poster Presentation
  • PP 152

  Progress towards high growth rate III-nitride heteroepitaxy by magnetron sputtering

  • Dr. Alexander Hinz (Fraunhofer FEP / DE)

   Electronic devices, Growth
• • Poster Presentation
  • PP 153

  Compositionally graded channel HEMTs for improved linearity in low-noise RF amplifiers

  • Alexis Papamichail (Linköping university / SE)

   Characterization, Growth
• • Poster Presentation
  • PP 154

  Investigating the role of h-BN on the growth of AlN by MBE

  • Aly Zaiter (CRHEA-CNRS / FR)

   Characterization, Growth
• • Poster Presentation
  • PP 155

  The dependence of the V/III ratio in high-temperature AlN growth with several misorientations off-angle sapphire substrates

  • Atsushi Tomita (Tokushima University / JP)

   Growth
• • Poster Presentation
  • PP 156

  Towards (10-11) semipolar GaN-based µLEDs on SOI

  • Beatrice Wannous (CEA / FR)

   Characterization, Growth
• • Poster Presentation
  • PP 157

  Laser molecular beam epitaxy of vertically self-aligned GaN nanorod array on flexible metal foil and their applications

  • Bipul Kumar Pradhan (National Physical Laboratory / IN)

   Characterization, Growth
• • Poster Presentation
  • PP 158

  Nitrogen dissolution in liquid Ga and Fe – experimental and ab initio data

  • Dr. Bohdan Sadowyi (Polish Academy of Sciences / PL)

   Characterization, Growth
• • Poster Presentation
  • PP 159

  Investigation of indium incorporation in ultrathin c-plane GaInN/GaN quantum wells grown via plasma-assisted molecular beam epitaxy

  • Farouk Aljasem (Technische Universität Braunschweig / DE)

   Characterization, Growth
• • Poster Presentation
  • PP 160

  Growth of GaN by tri-halide vapor phase epitaxy with GaCl3 gas synthesized by gallium metal and chlorine gas in external supply system

  • Kazukuni Hara (Nagoya University / JP)

   Characterization, Growth
• • Poster Presentation
  • PP 161

  GaN growth by MOVPE on patterned SOI substrates – from high-quality GaN platelets to micro LEDs

  • Kilian Baril (CRHEA / FR)

   Characterization, Growth
• • Poster Presentation
  • PP 162

  Modeling of convective transport in crystallization of gallium nitride by basic ammonothermal method

  • Marek Żak (Institude of High Pressure Physics / PL)

   Characterization, Growth
• • Poster Presentation
  • PP 163

  MOVPE of GaN layer with double-layered voids on rough SiC/Si substrate formed using Si surface carbonization

  • Dr. Momoko Deura (The University of Tokyo / JP)

   Growth
• • Poster Presentation
  • PP 164

  Summary of studies on the effect of H₂ used during the growth of quantum barriers on InGaN quantum wells

  • Dr. Robert Czernecki (Institute of High Pressure Physics PAS / PL)

   Growth, Optical devices
• • Poster Presentation
  • PP 165

  Dependence of c-plane sapphire misorientation angle in high temperature AlN growth and specific step bunching at large angle

  • Takumi Miyagawa (Tokushima University / JP)

   Growth
• • Poster Presentation
  • PP 166

  Evolution of the growth mode and its consequences during bulk crystallization of GaN

  • Dr. Tomasz Sochacki (Polish Academy of Science / PL)

   Growth
• • Poster Presentation
  • PP 167

  Internal stress and polarity control of GaN film by low impurity GaN target

  • Yuya Suemoto (Tosoh Corporation / JP)

   Characterization, Growth
• • Poster Presentation
  • PP 168

  Atomic-Scale Mechanism of Spontaneous Polarity Inversion in Nitrides on Sapphire Substrate Grown by MOCV

  • Professor Zhiqiang Liu (Chinese Academy of Science / CN)

   Characterization, Growth
• • Poster Presentation
  • PP 264

  High-resolution x-ray diffraction analysis of cubic GaN films on MgO (1 1 0) grown under different growth conditions by MBE

  • Kevin Meyer (Institute of Energy Research and Physical Technologies IEPT, TU Clausthal / DE)

   Characterization, Growth