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Growth of GaN by tri-halide vapor phase epitaxy with GaCl3 gas synthesized by gallium metal and chlorine gas in external supply system

Termin

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Topic Growth

Session

Growth

Themen

  • Characterization
  • Growth

Mitwirkende

Kazukuni Hara (Nagoya University / JP), Eizou Yamamoto (MIRISE Technologies Corporation / JP), Junji Ohara (MIRISE Technologies Corporation / JP), Masato Ishikawa (Gas-phase Growth Ltd. / JP), Dr. Jun Kojima (Nagoya University / JP), Dr. Shoichi Onda (Nagoya University / JP), Professor Jun Suda (Nagoya University / JP)

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