Alle Personen

Professor Jun Suda

Nagoya University / JP

Nagoya University

Weitere Beteiligungen

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    • Abstract Talk
    • AT 029
    Increase of reverse leakage current at GaN p-n junctions having different blocking voltages after forward current stress
     Characterization, Electronic devices
    • Poster Presentation
    • PP 033
    Depth profiling of a donor-like defect induced by ultra-low-dose Si-ion implantation and subsequent annealing in homoepitaxial n-type GaN
     Characterization, Electronic devices
  • –   
    • Abstract Talk
    • AT 047
    Mg-implanted vertical GaN junction barrier Schottky diodes with low on-resistance, high breakdown voltage, low turn-on voltage and avalanche capability
     Electronic devices
  • –   
    • Abstract Talk
    • AT 048
    Investigation of annealing conditions of Mg-implanted GaN by ultra-high-pressure annealing for further reduction of annealing pressure
     Characterization, Electronic devices
  • –   
    • Abstract Talk
    • AT 065
    Realization of low specific contact resistance on N-polar GaN surface using highly-doped n-type GaN film deposited by low-temperature reactive sputtering
     Characterization, Electronic devices
    • Poster Presentation
    • PP 160
    Growth of GaN by tri-halide vapor phase epitaxy with GaCl3 gas synthesized by gallium metal and chlorine gas in external supply system
     Characterization, Growth
    • Poster Presentation
    • PP 246
    Electrical characteristics of gated-anode diodes based on normally-off recessed-gate GaN HEMT for rectenna application
     Characterization, Electronic devices
  • –   
    • Abstract Talk
    • AT 137
    Electrical characterization of AlGaN/GaN HEMTs fabricated on semi-insulating GaN substrates doped with Fe, C, or Mn
     Characterization, Electronic devices
  • –   
    • Abstract Talk
    • PP 034
    Threshold voltage instability under positive bias stress in vertical GaN trench MOSFETs
     Characterization, Electronic devices
  • –   
    • Abstract Talk
    • AT 173
    Si concentration dependence of nitrogen-related electron traps introduced by electron beam irradiations to homoepitaxial n-type GaN
     Characterization, Electronic devices
  • –   
    • Abstract Talk
    • AT 174
    Correlation between non-ionizing energy loss and production rates of an electron trap at EC– (0.12-0.20) eV formed by various energetic particles in gallium nitride
     Characterization, Electronic devices
  • –   
    • Abstract Talk
    • AT 235
    Temperature dependence of impact ionization coefficients in GaN
     Characterization, Electronic devices
  • –   
    • Abstract Talk
    • AT 237
    Successful p-type activation of Mg-implanted GaN combined with sequential N implantation and atmospheric pressure anneal with AlN cap
     Characterization, Electronic devices
  • –   
    • Abstract Talk
    • AT 246
    Percentage of CN acceptors to residual carbon atoms in n-type GaN homoepitaxial layers
     Characterization, Electronic devices
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