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  • Abstract Talk
  • AT 173

Si concentration dependence of nitrogen-related electron traps introduced by electron beam irradiations to homoepitaxial n-type GaN

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Room Berlin

Session

Deep levels, Defect, NRCs-2

Themen

  • Characterization
  • Electronic devices

Mitwirkende

Meguru Endo (Nagoya University / JP), Prof. Dr. Masahiro Horita (Nagoya University / JP), Professor Jun Suda (Nagoya University / JP)

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