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Meguru Endo

Nagoya University / JP

Nagoya University

Vortrag

12.10.2022
17:15 – 17:30 12 Min. 3 Min.
Abstract Talk
AT 173
Si concentration dependence of nitrogen-related electron traps introduced by electron beam irradiations to homoepitaxial n-type GaN
Characterization, Electronic devices

Weitere Beteiligungen

12.10.2022
17:15 – 17:30 12 Min. 3 Min.
Abstract Talk
AT 173
Si concentration dependence of nitrogen-related electron traps introduced by electron beam irradiations to homoepitaxial n-type GaN
Characterization, Electronic devices