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IWN 2022
Programm
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Session
Session – Characterization
Deep levels, Defect, NRCs-2
Termin
Datum:
12.10.2022
Zeit:
16:15
–
17:45
Ort / Stream:
Room Berlin
Chair
Dr. Maria Tchernycheva
C2N-CNRS, Univ. Paris Saclay / FR
Professor Chris G. Van de Walle
University of California Santa Barbara / US
Programm
16:15
–
16:45
25 Min.
5 Min.
Invited Talk
IT 41
On the origin of the yellow luminescence band in GaN
Prof. Dr. Michael A. Reshchikov (Virginia Commonwealth University / US)
16:45
–
17:00
12 Min.
3 Min.
Abstract Talk
AT 171
Do N vacancies exist in III-nitrides?
Professor Filip Tuomisto (University of Helsinki / FI)
Characterization, Electronic devices
17:00
–
17:15
12 Min.
3 Min.
Abstract Talk
AT 172
Defect-mediated diffusion of implanted Mg in GaN – suppressing dopant redistribution by sequential thermal and microwave annealing
Vincent Meyers (SUNY Polytechnic Institute / US)
Characterization, Electronic devices
17:15
–
17:30
12 Min.
3 Min.
Abstract Talk
AT 173
Si concentration dependence of nitrogen-related electron traps introduced by electron beam irradiations to homoepitaxial n-type GaN
Meguru Endo (Nagoya University / JP)
Characterization, Electronic devices
17:30
–
17:45
12 Min.
3 Min.
Abstract Talk
AT 174
Correlation between non-ionizing energy loss and production rates of an electron trap at
E
C
– (0.12-0.20) eV formed by various energetic particles in gallium nitride
Keito Aoshima (Nagoya University / JP)
Characterization, Electronic devices
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