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Professor Filip Tuomisto

University of Helsinki / FI

University of Helsinki

Vorsitz

14.10.2022
10:30 – 11:45
Session
Late News Characterization
Room Berlin

Vortrag

12.10.2022
16:45 – 17:00 12 Min. 3 Min.
Abstract Talk
AT 171
Do N vacancies exist in III-nitrides?
Characterization, Electronic devices

Weitere Beteiligungen

10.10.2022
Poster Presentation
PP 075
Ultra-high-pressure doping of gallium nitride with europium
Growth, Novel Materials and Nanostructures
10.10.2022
Poster Presentation
PP 019
Origins of electrical compensation in Si-doped HVPE GaN
Characterization, Growth
11.10.2022
Poster Presentation
PP 120
Electrical compensation in aluminum rich Si-doped 90% AlGaN determined by positron annihilation and X-ray absorption spectroscopy
Characterization, Growth
12.10.2022
16:45 – 17:00 12 Min. 3 Min.
Abstract Talk
AT 171
Do N vacancies exist in III-nitrides?
Characterization, Electronic devices
13.10.2022
09:30 – 09:45 12 Min. 3 Min.
Abstract Talk
AT 205
Effect of point defects below the InGaN/GaN QWs on their structural and optical properties at elevated temperatures
Characterization, Growth