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IWN 2022
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DE
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Professor Filip Tuomisto
University of Helsinki / FI
University of Helsinki
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Date
Chair
14/10/2022
10:30
–
11:45
Session
Late News Characterization
Room Berlin
Speaker
12/10/2022
16:45
–
17:00
12 Min.
3 Min.
Abstract Talk
AT 171
Do N vacancies exist in III-nitrides?
Characterization, Electronic devices
Further involvements
10/10/2022
Poster Presentation
PP 075
Ultra-high-pressure doping of gallium nitride with europium
Growth, Novel Materials and Nanostructures
10/10/2022
Poster Presentation
PP 019
Origins of electrical compensation in Si-doped HVPE GaN
Characterization, Growth
11/10/2022
Poster Presentation
PP 120
Electrical compensation in aluminum rich Si-doped 90% AlGaN determined by positron annihilation and X-ray absorption spectroscopy
Characterization, Growth
12/10/2022
16:45
–
17:00
12 Min.
3 Min.
Abstract Talk
AT 171
Do N vacancies exist in III-nitrides?
Characterization, Electronic devices
13/10/2022
09:30
–
09:45
12 Min.
3 Min.
Abstract Talk
AT 205
Effect of point defects below the InGaN/GaN QWs on their structural and optical properties at elevated temperatures
Characterization, Growth
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