Session – Characterization
Deep levels, Defect, NRCs-2

Programme

• 16:15 – 16:45 25 Min. 5 Min.

  • Invited Talk
  • IT 41

  On the origin of the yellow luminescence band in GaN

  • Prof. Dr. Michael A. Reshchikov (Virginia Commonwealth University / US)
• 16:45 – 17:00 12 Min. 3 Min.

  • Abstract Talk
  • AT 171

  Do N vacancies exist in III-nitrides?

  • Professor Filip Tuomisto (University of Helsinki / FI)

   Characterization, Electronic devices
• 17:00 – 17:15 12 Min. 3 Min.

  • Abstract Talk
  • AT 172

  Defect-mediated diffusion of implanted Mg in GaN – suppressing dopant redistribution by sequential thermal and microwave annealing

  • Vincent Meyers (SUNY Polytechnic Institute / US)

   Characterization, Electronic devices
• 17:15 – 17:30 12 Min. 3 Min.

  • Abstract Talk
  • AT 173

  Si concentration dependence of nitrogen-related electron traps introduced by electron beam irradiations to homoepitaxial n-type GaN

  • Meguru Endo (Nagoya University / JP)

   Characterization, Electronic devices
• 17:30 – 17:45 12 Min. 3 Min.

  • Abstract Talk
  • AT 174

  Correlation between non-ionizing energy loss and production rates of an electron trap at E_C– (0.12-0.20) eV formed by various energetic particles in gallium nitride

  • Keito Aoshima (Nagoya University / JP)

   Characterization, Electronic devices