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IWN 2022
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Dr. Maria Tchernycheva
C2N-CNRS, Univ. Paris Saclay / FR
C2N-CNRS, Univ. Paris Saclay
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Date
Chair
11/10/2022
08:30
–
10:00
Session
Display
Salon Vienna
12/10/2022
16:15
–
17:45
Session
Deep levels, Defect, NRCs-2
Room Berlin
Speaker
11/10/2022
18:00
–
20:15
Poster Presentation
PP 290
What triggers epitaxial growth of GaN nanowires on graphene?
Growth, Novel Materials and Nanostructures
13/10/2022
12:00
–
12:15
12 Min.
3 Min.
Abstract Talk
AT 209
InGaN/GaN nanowire light emitting diodes with an inverted doping order
Characterization, Optical devices
Further involvements
10/10/2022
15:45
–
16:00
12 Min.
3 Min.
Abstract Talk
AT 023
Etching of the lateral SiGaN passivation layer for full facet coverage in InGaN/GaN core-shell nanowires by MOVPE
Growth, Novel Materials and Nanostructures
11/10/2022
13:15
–
15:30
Poster Presentation
PP 186
Selective area growth of GaN nanorods by HVPE
Growth, Novel Materials and Nanostructures
11/10/2022
18:00
–
20:15
Poster Presentation
PP 290
What triggers epitaxial growth of GaN nanowires on graphene?
Growth, Novel Materials and Nanostructures
13/10/2022
12:00
–
12:15
12 Min.
3 Min.
Abstract Talk
AT 209
InGaN/GaN nanowire light emitting diodes with an inverted doping order
Characterization, Optical devices
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