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Dr. Maria Tchernycheva

C2N-CNRS, Univ. Paris Saclay / FR

C2N-CNRS, Univ. Paris Saclay

Vorsitz

11.10.2022
08:30 – 10:00
Session
Display
Salon Vienna
12.10.2022
16:15 – 17:45
Session
Deep levels, Defect, NRCs-2
Room Berlin

Redner

11.10.2022
Poster Presentation
PP 290
What triggers epitaxial growth of GaN nanowires on graphene?
Novel Materials and Nanostructures, Growth
13.10.2022
12:00 – 12:15 12 Min. 3 Min.
Abstract Talk
AT 209
InGaN/GaN nanowire light emitting diodes with an inverted doping order
Optical devices, Characterization

Weitere Beteiligungen als Autor

10.10.2022
15:45 – 16:00 12 Min. 3 Min.
Abstract Talk
AT 023
Etching of the lateral SiGaN passivation layer for full facet coverage in InGaN/GaN core-shell nanowires by MOVPE
Novel Materials and Nanostructures, Growth
11.10.2022
Poster Presentation
PP 186
Selective area growth of GaN nanorods by HVPE
Novel Materials and Nanostructures, Growth
11.10.2022
Poster Presentation
PP 290
What triggers epitaxial growth of GaN nanowires on graphene?
Novel Materials and Nanostructures, Growth
13.10.2022
12:00 – 12:15 12 Min. 3 Min.
Abstract Talk
AT 209
InGaN/GaN nanowire light emitting diodes with an inverted doping order
Optical devices, Characterization