Bitte aktivieren Sie Javascript um alle Funktionen nutzen zu können und ihre Nutzererfahrung zu verbessern.
IWN 2022
Programm
Personen
Suche
DE
Alle Personen
Dr. Maria Tchernycheva
C2N-CNRS, Univ. Paris Saclay / FR
C2N-CNRS, Univ. Paris Saclay
Sortiert nach Typ
Datum
Vorsitz
11.10.2022
08:30
–
10:00
Session
Display
Salon Vienna
12.10.2022
16:15
–
17:45
Session
Deep levels, Defect, NRCs-2
Room Berlin
Vortrag
11.10.2022
18:00
–
20:15
Poster Presentation
PP 290
What triggers epitaxial growth of GaN nanowires on graphene?
Growth, Novel Materials and Nanostructures
13.10.2022
12:00
–
12:15
12 Min.
3 Min.
Abstract Talk
AT 209
InGaN/GaN nanowire light emitting diodes with an inverted doping order
Characterization, Optical devices
Weitere Beteiligungen
10.10.2022
15:45
–
16:00
12 Min.
3 Min.
Abstract Talk
AT 023
Etching of the lateral SiGaN passivation layer for full facet coverage in InGaN/GaN core-shell nanowires by MOVPE
Growth, Novel Materials and Nanostructures
11.10.2022
13:15
–
15:30
Poster Presentation
PP 186
Selective area growth of GaN nanorods by HVPE
Growth, Novel Materials and Nanostructures
11.10.2022
18:00
–
20:15
Poster Presentation
PP 290
What triggers epitaxial growth of GaN nanowires on graphene?
Growth, Novel Materials and Nanostructures
13.10.2022
12:00
–
12:15
12 Min.
3 Min.
Abstract Talk
AT 209
InGaN/GaN nanowire light emitting diodes with an inverted doping order
Characterization, Optical devices
v1.27.1
© Conventus Congressmanagement & Marketing GmbH
Impressum
Datenschutz