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Abstract Talk
AT 173

Si concentration dependence of nitrogen-related electron traps introduced by electron beam irradiations to homoepitaxial n-type GaN

Appointment

Date: 12/10/2022

Time: 17:15 – 17:30

Talk time: 12 Min.

Discussion time: 3 Min.

Location / Stream:

Room Berlin

Session

Deep levels, Defect, NRCs-2

Topics

Characterization
Electronic devices

Authors

Meguru Endo (Nagoya University / JP), Prof. Dr. Masahiro Horita (Nagoya University / JP), Professor Jun Suda (Nagoya University / JP)