Professor Jun Suda

Further involvements

• 10/10/2022

  16:15 – 16:30 12 Min. 3 Min.

  • Abstract Talk
  • AT 029

  Increase of reverse leakage current at GaN p-n junctions having different blocking voltages after forward current stress

   Characterization, Electronic devices
• 10/10/2022

  • Poster Presentation
  • PP 033

  Depth profiling of a donor-like defect induced by ultra-low-dose Si-ion implantation and subsequent annealing in homoepitaxial n-type GaN

   Characterization, Electronic devices
• 11/10/2022

  09:00 – 09:15 12 Min. 3 Min.

  • Abstract Talk
  • AT 047

  Mg-implanted vertical GaN junction barrier Schottky diodes with low on-resistance, high breakdown voltage, low turn-on voltage and avalanche capability

   Electronic devices
• 11/10/2022

  09:15 – 09:30 12 Min. 3 Min.

  • Abstract Talk
  • AT 048

  Investigation of annealing conditions of Mg-implanted GaN by ultra-high-pressure annealing for further reduction of annealing pressure

   Characterization, Electronic devices
• 11/10/2022

  11:00 – 11:15 12 Min. 3 Min.

  • Abstract Talk
  • AT 065

  Realization of low specific contact resistance on N-polar GaN surface using highly-doped n-type GaN film deposited by low-temperature reactive sputtering

   Characterization, Electronic devices
• 11/10/2022

  • Poster Presentation
  • PP 160

  Growth of GaN by tri-halide vapor phase epitaxy with GaCl3 gas synthesized by gallium metal and chlorine gas in external supply system

   Characterization, Growth
• 11/10/2022

  • Poster Presentation
  • PP 246

  Electrical characteristics of gated-anode diodes based on normally-off recessed-gate GaN HEMT for rectenna application

   Characterization, Electronic devices
• 12/10/2022

  10:30 – 10:45 12 Min. 3 Min.

  • Abstract Talk
  • AT 137

  Electrical characterization of AlGaN/GaN HEMTs fabricated on semi-insulating GaN substrates doped with Fe, C, or Mn

   Characterization, Electronic devices
• 12/10/2022

  14:45 – 15:00 12 Min. 3 Min.

  • Abstract Talk
  • PP 034

  Threshold voltage instability under positive bias stress in vertical GaN trench MOSFETs

   Characterization, Electronic devices
• 12/10/2022

  17:15 – 17:30 12 Min. 3 Min.

  • Abstract Talk
  • AT 173

  Si concentration dependence of nitrogen-related electron traps introduced by electron beam irradiations to homoepitaxial n-type GaN

   Characterization, Electronic devices
• 12/10/2022

  17:30 – 17:45 12 Min. 3 Min.

  • Abstract Talk
  • AT 174

  Correlation between non-ionizing energy loss and production rates of an electron trap at E_C– (0.12-0.20) eV formed by various energetic particles in gallium nitride

   Characterization, Electronic devices
• 14/10/2022

  09:15 – 09:30 12 Min. 3 Min.

  • Abstract Talk
  • AT 235

  Temperature dependence of impact ionization coefficients in GaN

   Characterization, Electronic devices
• 14/10/2022

  09:45 – 10:00 12 Min. 3 Min.

  • Abstract Talk
  • AT 237

  Successful p-type activation of Mg-implanted GaN combined with sequential N implantation and atmospheric pressure anneal with AlN cap

   Characterization, Electronic devices
• 14/10/2022

  11:00 – 11:15 12 Min. 3 Min.

  • Abstract Talk
  • AT 246

  Percentage of C_N acceptors to residual carbon atoms in n-type GaN homoepitaxial layers

   Characterization, Electronic devices