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Abstract Talk
AT 137

Electrical characterization of AlGaN/GaN HEMTs fabricated on semi-insulating GaN substrates doped with Fe, C, or Mn

Appointment

Date: 12/10/2022

Time: 10:30 – 10:45

Talk time: 12 Min.

Discussion time: 3 Min.

Location / Stream:

Salon Rome

Session

Substrates, field effects, transport

Topics

Characterization
Electronic devices

Authors

Daiki Tanaka (Nagoya university / JP), Dr. Kenji Iso (Mitsubishi Chemical Corporation / JP; Nagoya University IMaSS / JP), Akinori Miura (Mitsubishi Chemical Corporation / JP; Nagoya University IMaSS / JP), Professor Yuji Ando (Nagoya university / JP), Professor Jun Suda (Nagoya university / JP)