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Abstract Talk
AT 047

Mg-implanted vertical GaN junction barrier Schottky diodes with low on-resistance, high breakdown voltage, low turn-on voltage and avalanche capability

Appointment

Date: 11/10/2022

Time: 09:00 – 09:15

Talk time: 12 Min.

Discussion time: 3 Min.

Location / Stream:

Session

Ion implantation and annealing

Topic

Electronic devices

Authors

Dr. Maciej Matys (IMaSS Nagoya University / JP), Prof. Dr. Tsutomu Uesugi (IMaSS Nagoya University / JP), Kazuki Kitagawa (Nagoya University / JP), Professor Jun Suda (Nagoya University / JP), Professor Tetsu Kachi (IMaSS Nagoya University / JP)