Session – Electronic Devices
Ion implantation and annealing

Programme

• 08:30 – 09:00 25 Min. 5 Min.

  • Invited Talk
  • IT 14

  Selective-area p-type doping by ion implantation with ultra-high-pressure annealing and its device applications

  • Professor Tetsu Kachi (Nagoya University / JP)
• 09:00 – 09:15 12 Min. 3 Min.

  • Abstract Talk
  • AT 047

  Mg-implanted vertical GaN junction barrier Schottky diodes with low on-resistance, high breakdown voltage, low turn-on voltage and avalanche capability

  • Dr. Maciej Matys (Nagoya University / JP)

   Electronic devices
• 09:15 – 09:30 12 Min. 3 Min.

  • Abstract Talk
  • AT 048

  Investigation of annealing conditions of Mg-implanted GaN by ultra-high-pressure annealing for further reduction of annealing pressure

  • Kensuke Sumida (Nagoya University / JP)

   Characterization, Electronic devices
• 09:30 – 09:45 12 Min. 3 Min.

  • Abstract Talk
  • AT 049

  Improved minority carrier lifetime in p-type GaN segments prepared by vacancy-guided redistribution of Mg

  • Dr. Kohei Shima (Tohoku University / JP)

   Characterization, Electronic devices
• 09:45 – 10:00 12 Min. 3 Min.

  • Abstract Talk
  • AT 050

  Annealing of Mg nanodot arrays on GaN for p-type ohmic contact

  • Dr. Jia Wang (Nagoya University / JP)

   Electronic devices, Novel Materials and Nanostructures