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IWN 2022
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Session
Session – Electronic Devices
Ion implantation and annealing
Appointment
Date:
11/10/2022
Time:
08:30
–
10:00
Location / Stream:
Salon Rome
Chair
Dr. Matteo Borga
Interuniversity Microelectronics Centre / BE
Programme
08:30
–
09:00
25 Min.
5 Min.
Invited Talk
IT 14
Selective-area p-type doping by ion implantation with ultra-high-pressure annealing and its device applications
Professor Tetsu Kachi (Nagoya University / JP)
09:00
–
09:15
12 Min.
3 Min.
Abstract Talk
AT 047
Mg-implanted vertical GaN junction barrier Schottky diodes with low on-resistance, high breakdown voltage, low turn-on voltage and avalanche capability
Dr. Maciej Matys (Nagoya University / JP)
Electronic devices
09:15
–
09:30
12 Min.
3 Min.
Abstract Talk
AT 048
Investigation of annealing conditions of Mg-implanted GaN by ultra-high-pressure annealing for further reduction of annealing pressure
Kensuke Sumida (Nagoya University / JP)
Characterization, Electronic devices
09:30
–
09:45
12 Min.
3 Min.
Abstract Talk
AT 049
Improved minority carrier lifetime in p-type GaN segments prepared by vacancy-guided redistribution of Mg
Dr. Kohei Shima (Tohoku University / JP)
Characterization, Electronic devices
09:45
–
10:00
12 Min.
3 Min.
Abstract Talk
AT 050
Annealing of Mg nanodot arrays on GaN for p-type ohmic contact
Dr. Jia Wang (Nagoya University / JP)
Electronic devices, Novel Materials and Nanostructures
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