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IWN 2022
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Professor Tetsu Kachi
Nagoya University / JP
Nagoya University
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Date
Chair
10/10/2022
15:45
–
17:15
Session
Vertical devices I
Salon Rome
Invited Speaker
11/10/2022
08:30
–
09:00
25 Min.
5 Min.
Invited Talk
IT 14
Selective-area p-type doping by ion implantation with ultra-high-pressure annealing and its device applications
Further involvements
10/10/2022
Poster Presentation
PP 039
Channeled ion implantation of Mg into GaN and development of the simulation program
Characterization, Electronic devices
11/10/2022
09:00
–
09:15
12 Min.
3 Min.
Abstract Talk
AT 047
Mg-implanted vertical GaN junction barrier Schottky diodes with low on-resistance, high breakdown voltage, low turn-on voltage and avalanche capability
Electronic devices
11/10/2022
09:15
–
09:30
12 Min.
3 Min.
Abstract Talk
AT 048
Investigation of annealing conditions of Mg-implanted GaN by ultra-high-pressure annealing for further reduction of annealing pressure
Characterization, Electronic devices
11/10/2022
11:00
–
11:15
12 Min.
3 Min.
Abstract Talk
AT 065
Realization of low specific contact resistance on N-polar GaN surface using highly-doped n-type GaN film deposited by low-temperature reactive sputtering
Characterization, Electronic devices
14/10/2022
09:15
–
09:30
12 Min.
3 Min.
Abstract Talk
AT 235
Temperature dependence of impact ionization coefficients in GaN
Characterization, Electronic devices
14/10/2022
11:00
–
11:15
12 Min.
3 Min.
Abstract Talk
AT 246
Percentage of C
N
acceptors to residual carbon atoms in n-type GaN homoepitaxial layers
Characterization, Electronic devices
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