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Professor Tetsu Kachi

Nagoya University / JP

Nagoya University

Vorsitz

10.10.2022
15:45 – 17:15
Session
Vertical devices I
Salon Rome

Invited Speaker

11.10.2022
08:30 – 09:00 25 Min. 5 Min.
Invited Talk
IT 14
Selective-area p-type doping by ion implantation with ultra-high-pressure annealing and its device applications

Weitere Beteiligungen

10.10.2022
Poster Presentation
PP 039
Channeled ion implantation of Mg into GaN and development of the simulation program
Characterization, Electronic devices
11.10.2022
09:00 – 09:15 12 Min. 3 Min.
Abstract Talk
AT 047
Mg-implanted vertical GaN junction barrier Schottky diodes with low on-resistance, high breakdown voltage, low turn-on voltage and avalanche capability
Electronic devices
11.10.2022
09:15 – 09:30 12 Min. 3 Min.
Abstract Talk
AT 048
Investigation of annealing conditions of Mg-implanted GaN by ultra-high-pressure annealing for further reduction of annealing pressure
Characterization, Electronic devices
11.10.2022
11:00 – 11:15 12 Min. 3 Min.
Abstract Talk
AT 065
Realization of low specific contact resistance on N-polar GaN surface using highly-doped n-type GaN film deposited by low-temperature reactive sputtering
Characterization, Electronic devices
14.10.2022
09:15 – 09:30 12 Min. 3 Min.
Abstract Talk
AT 235
Temperature dependence of impact ionization coefficients in GaN
Characterization, Electronic devices
14.10.2022
11:00 – 11:15 12 Min. 3 Min.
Abstract Talk
AT 246
Percentage of C_N acceptors to residual carbon atoms in n-type GaN homoepitaxial layers
Characterization, Electronic devices