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Professor Tetsu Kachi

Nagoya University / JP

Nagoya University

Chair

10.10.2022
15:45 – 17:15
Session
Vertical devices I
Salon Rome

Invited Speaker

11.10.2022
08:30 – 09:00 25 Min. 5 Min.
Invited Talk
IT 14
Selective-area p-type doping by ion implantation with ultra-high-pressure annealing and its device applications

Weitere Beteiligungen

10.10.2022
17:30 – 19:30
Poster Presentation
PP 039
Channeled ion implantation of Mg into GaN and development of the simulation program
Characterization, Electronic devices
11.10.2022
09:00 – 09:15 12 Min. 3 Min.
Abstract Talk
AT 047
Mg-implanted vertical GaN junction barrier Schottky diodes with low on-resistance, high breakdown voltage, low turn-on voltage and avalanche capability
Electronic devices
11.10.2022
09:15 – 09:30 12 Min. 3 Min.
Abstract Talk
AT 048
Investigation of annealing conditions of Mg-implanted GaN by ultra-high-pressure annealing for further reduction of annealing pressure
Characterization, Electronic devices
11.10.2022
11:00 – 11:15 12 Min. 3 Min.
Abstract Talk
AT 065
Realization of low specific contact resistance on N-polar GaN surface using highly-doped n-type GaN film deposited by low-temperature reactive sputtering
Characterization, Electronic devices
14.10.2022
09:15 – 09:30 12 Min. 3 Min.
Abstract Talk
AT 235
Temperature dependence of impact ionization coefficients in GaN
Characterization, Electronic devices
14.10.2022
11:00 – 11:15 12 Min. 3 Min.
Abstract Talk
AT 246
Percentage of C_N acceptors to residual carbon atoms in n-type GaN homoepitaxial layers
Characterization, Electronic devices