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Abstract Talk
AT 065

Realization of low specific contact resistance on N-polar GaN surface using highly-doped n-type GaN film deposited by low-temperature reactive sputtering

Termin

Datum: 11.10.2022

Zeit: 11:00 – 11:15

Redezeit: 12 Min.

Diskussionszeit: 3 Min.

Ort / Stream:

Session

High frequency I

Themen

Characterization
Electronic devices

Mitwirkende

Dr. Shinji Yamada (Nagoya University / JP), Taehui Lee (Nagoya University / JP), Masanori Shirai (ULVAC, Inc. / JP), Hiroki Kobayashi (ULVAC, Inc. / JP), Ryuichiro Kamimura (ULVAC, Inc. / JP), Manabu Arai (Nagoya University / JP), Professor Tetsu Kachi (Nagoya University / JP), Professor Jun Suda (Nagoya University / JP)