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IWN 2022
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Dr. Shinji Yamada
Nagoya University / JP
Nagoya University
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Datum
Vortrag
11.10.2022
11:00
–
11:15
12 Min.
3 Min.
Abstract Talk
AT 065
Realization of low specific contact resistance on N-polar GaN surface using highly-doped n-type GaN film deposited by low-temperature reactive sputtering
Characterization, Electronic devices
Weitere Beteiligungen
11.10.2022
11:00
–
11:15
12 Min.
3 Min.
Abstract Talk
AT 065
Realization of low specific contact resistance on N-polar GaN surface using highly-doped n-type GaN film deposited by low-temperature reactive sputtering
Characterization, Electronic devices
14.10.2022
09:15
–
09:30
12 Min.
3 Min.
Abstract Talk
AT 235
Temperature dependence of impact ionization coefficients in GaN
Characterization, Electronic devices
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