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IWN 2022
Programm
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Session
Session – Electronic Devices
High frequency I
Termin
Datum:
11.10.2022
Zeit:
10:30
–
12:00
Ort / Stream:
Salon Rome
Chair
Professor Srabanti Chowdhury
Stanford University / US
Hans-Joachim Würfl
Ferdinand-Braun-Institut / DE
Programm
10:30
–
11:00
25 Min.
5 Min.
Invited Talk
IT 20
N-Polar GaN Transistors for beyond 5G applications
Professor Umesh Mishra (University of California / US)
11:00
–
11:15
12 Min.
3 Min.
Abstract Talk
AT 065
Realization of low specific contact resistance on N-polar GaN surface using highly-doped n-type GaN film deposited by low-temperature reactive sputtering
Dr. Shinji Yamada (Nagoya University / JP)
Characterization, Electronic devices
11:15
–
11:30
12 Min.
3 Min.
Abstract Talk
AT 066
AlN/GaN/AlN HEMTs large signal response at 94 GHz
Dr. Austin Hickman (Cornell University / US)
Electronic devices, Novel Materials and Nanostructures
11:30
–
11:45
12 Min.
3 Min.
Abstract Talk
AT 067
First demonstration of N-polar AlGaN/AlGaN high electron mobility transistor
Professor Srabanti Chowdhury (Stanford University / US)
Electronic devices, Growth
11:45
–
12:00
12 Min.
3 Min.
Abstract Talk
AT 068
Investigation of electrical properties of N-Polar AlGaN/AlN heterostructure field effect transistors
Prof. Dr. Narihito Okada (Yamaguchi University / JP)
Electronic devices, Growth
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