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IWN 2022
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Session
Session – Electronic Devices
Vertical devices I
Termin
Datum:
10.10.2022
Zeit:
15:45
–
17:15
Ort / Stream:
Salon Rome
Chair
Professor Tetsu Kachi
Nagoya University / JP
Professor Matteo Meneghini
University of Padova / IT
Programm
15:45
–
16:15
25 Min.
5 Min.
Invited Talk
IT 08
Design and Characterization of p-body Layer of Vertical GaN Devices on Engineered Substrates
Dr. Matteo Borga (Interuniversity Microelectronics Centre / BE)
16:15
–
16:30
12 Min.
3 Min.
Abstract Talk
AT 029
Increase of reverse leakage current at GaN p-n junctions having different blocking voltages after forward current stress
Dr. Tetsuo Narita (Toyota Central R&D Labs., Inc. / JP)
Characterization, Electronic devices
16:30
–
16:45
12 Min.
3 Min.
Abstract Talk
AT 030
Achieving avalanche limited breakdown on vertical GaN p/n-diodes with field-plate edge termination
Tailang Xie (NaMLab gGmbH / DE)
Characterization, Electronic devices
16:45
–
17:00
12 Min.
3 Min.
Abstract Talk
AT 031
Evaluation of GaN-based CAVETs fabricated by non-planar selective area regrowth or ion implantation
Dr. Rachid Driad (Fraunhofer - IAF / DE)
Electronic devices, Growth
17:00
–
17:15
12 Min.
3 Min.
Abstract Talk
AT 032
Uniform performance of 1.3kV breakdown characteristics in GaN vertical PIN rectifiers with nitrogen-implanted floating guard rings
Professor Russell Dupuis (Georgia Institute of Technology / US)
Characterization, Electronic devices
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