Session – Electronic Devices
Vertical devices I

Programme

• 15:45 – 16:15 25 Min. 5 Min.

  • Invited Talk
  • IT 08

  Design and Characterization of p-body Layer of Vertical GaN Devices on Engineered Substrates

  • Dr. Matteo Borga (Interuniversity Microelectronics Centre / BE)
• 16:15 – 16:30 12 Min. 3 Min.

  • Abstract Talk
  • AT 029

  Increase of reverse leakage current at GaN p-n junctions having different blocking voltages after forward current stress

  • Dr. Tetsuo Narita (Toyota Central R&D Labs., Inc. / JP)

   Characterization, Electronic devices
• 16:30 – 16:45 12 Min. 3 Min.

  • Abstract Talk
  • AT 030

  Achieving avalanche limited breakdown on vertical GaN p/n-diodes with field-plate edge termination

  • Tailang Xie (NaMLab gGmbH / DE)

   Characterization, Electronic devices
• 16:45 – 17:00 12 Min. 3 Min.

  • Abstract Talk
  • AT 031

  Evaluation of GaN-based CAVETs fabricated by non-planar selective area regrowth or ion implantation

  • Dr. Rachid Driad (Fraunhofer - IAF / DE)

   Electronic devices, Growth
• 17:00 – 17:15 12 Min. 3 Min.

  • Abstract Talk
  • AT 032

  Uniform performance of 1.3kV breakdown characteristics in GaN vertical PIN rectifiers with nitrogen-implanted floating guard rings

  • Professor Russell Dupuis (Georgia Institute of Technology / US)

   Characterization, Electronic devices