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Abstract Talk
AT 029

Increase of reverse leakage current at GaN p-n junctions having different blocking voltages after forward current stress

Appointment

Date: 10/10/2022

Time: 16:15 – 16:30

Talk time: 12 Min.

Discussion time: 3 Min.

Location / Stream:

Salon Rome

Session

Vertical devices I

Topics

Characterization
Electronic devices

Authors

Dr. Tetsuo Narita (Toyota Central R&D Labs., Inc. / JP), Dr. Yoshitaka Nagasato (MIRISE Technologies / JP), Dr. Masakazu Kanechika (Nagoya University / JP), Takeshi Kondo (Nagoya University / JP), Prof. Dr. Tsutomu Uesugi (Nagoya University / JP), Prof. Dr. Kazuyoshi Tomita (Nagoya University / JP), Satoshi Ikeda (MIRISE Technologies / JP), Dr. Hiroki Watanabe (MIRISE Technologies / JP), Tomoyuki Shoji (Toyota Central R&D Labs., Inc. / JP), Tomohiko Mori (Toyota Central R&D Labs., Inc. / JP), Satoshi Yamaguchi (Toyota Central R&D Labs., Inc. / JP), Yasuji Kimoto (Toyota Central R&D Labs., Inc. / JP), Masayoshi Kosaki (Toyoda Gosei / JP), Tohru Oka (Toyoda Gosei / JP), Dr. Jun Kojima (Nagoya University / JP), Professor Jun Suda (Nagoya University / JP)