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Prof. Dr. Kazuyoshi Tomita

Nagoya University / JP

Nagoya University

Further involvements

10/10/2022
16:15 – 16:30 12 Min. 3 Min.
Abstract Talk
AT 029
Increase of reverse leakage current at GaN p-n junctions having different blocking voltages after forward current stress
Characterization, Electronic devices
14/10/2022
11:00 – 11:15 12 Min. 3 Min.
Abstract Talk
AT 246
Percentage of C_N acceptors to residual carbon atoms in n-type GaN homoepitaxial layers
Characterization, Electronic devices