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IWN 2022
Programm
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Professor Russell Dupuis
Georgia Institute of Technology / US
Georgia Institute of Technology
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Datum
Vorsitz
10.10.2022
08:30
–
09:30
Social Programme
Opening Ceremony
Grand Ballroom
12.10.2022
10:30
–
12:00
Session
UV LEDs : degradation
Salon Vienna
Vortrag
10.10.2022
14:30
–
14:45
12 Min.
3 Min.
Abstract Talk
AT 016
Growth and characterization of high Al-mole-fraction AlGaN on patterned GaN platforms for mitigating strain-induced cracks beyond the critical layer thickness
Growth, Optical devices
10.10.2022
17:00
–
17:15
12 Min.
3 Min.
Abstract Talk
AT 032
Uniform performance of 1.3kV breakdown characteristics in GaN vertical PIN rectifiers with nitrogen-implanted floating guard rings
Characterization, Electronic devices
11.10.2022
11:00
–
11:15
12 Min.
3 Min.
Abstract Talk
AT 071
Improved yield and performance of Al
0.6
Ga
0.4
N deep-ultraviolet avalanche photodiodes via ion implantation
Growth, Optical devices
Weitere Beteiligungen
10.10.2022
14:30
–
14:45
12 Min.
3 Min.
Abstract Talk
AT 016
Growth and characterization of high Al-mole-fraction AlGaN on patterned GaN platforms for mitigating strain-induced cracks beyond the critical layer thickness
Growth, Optical devices
10.10.2022
17:00
–
17:15
12 Min.
3 Min.
Abstract Talk
AT 032
Uniform performance of 1.3kV breakdown characteristics in GaN vertical PIN rectifiers with nitrogen-implanted floating guard rings
Characterization, Electronic devices
11.10.2022
11:00
–
11:15
12 Min.
3 Min.
Abstract Talk
AT 071
Improved yield and performance of Al
0.6
Ga
0.4
N deep-ultraviolet avalanche photodiodes via ion implantation
Growth, Optical devices
v1.25.4
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