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Abstract Talk
AT 032

Uniform performance of 1.3kV breakdown characteristics in GaN vertical PIN rectifiers with nitrogen-implanted floating guard rings

Termin

Datum: 10.10.2022

Zeit: 17:00 – 17:15

Redezeit: 12 Min.

Diskussionszeit: 3 Min.

Ort / Stream:

Salon Rome

Session

Vertical devices I

Themen

Characterization
Electronic devices

Mitwirkende

Dr. Minkyu Cho (Georgia Institute of Technology / US), Matthias Daeumer (Lawrence Livermore National Laboratory / US), Zhiyu Xu (Georgia Institute of Technology / US), Marzieh Bakhtiary-Noodeh (Georgia Institute of Technology / US), Jae-Hyuck Yoo (Lawrence Livermore National Laboratory / US), Qinghui Shao (Lawrence Livermore National Laboratory / US), Ted Laurence (Lawrence Livermore National Laboratory / US), Tadao Hashimoto (SixPoint Materials / US), Edward Letts (SixPoint Materials / US), Daryl Key (SixPoint Materials / US), Dr. Theeradetch Detchprohm (Georgia Institute of Technology / US), Professor Russell Dupuis (Georgia Institute of Technology / US), Shyh-Chiang Shen (Georgia Institute of Technology / US)