IWN 2022

International Workshop on Nitride Semiconductors 2022

Increase of reverse leakage current at GaN p-n junctions having different blocking voltages after forward current stress

Electronic devices

Vertical devices I

Abstract Talk

Characterization

Temperature dependence of impact ionization coefficients in GaN

Modelling and characterization

Percentage of C<sub>N</sub> acceptors to residual carbon atoms in n-type GaN homoepitaxial layers

Late News Characterization

Salon Rome

Session

Diffusion of Mg and H atoms in Mg-doped and Mg ion-implanted GaN through annealing

Salon Moskau

Vertical GaN Processing

Invited Talk

Invited Speaker

Panel discussion

GaN is already now the material of choice for power conversion up to 650 V. Despite a similar breakdown field as SiC, GaN is not compatible for higher voltages up to 10 kV. The figures of merit predict a really strong performance with experimental results lagging. In the rump session, we will discuss what is currently limiting the performance of GaN based power electronics and how to overcome these limits. Additionally, the nitride family also offers a wider range of materials, e.g., AlGaN and AlN with even wider band gaps with breakdown fields surpassing SiC and even diamond. Theoretically these materials could be the next generation semiconductors for power electronics. We will critically discuss the actions that need to be taken to align theoretical expectations with experimental results.<br><br>Panelists include experts in GaN power devices, native substrate growth and preparation, AlGaN and AlN power electronics as well as an intimate knowledge of the industry and their requirements for a successful transfer into the market.

Salon London

What do we need to do to make III-nitrides surpass SiC in power electronics?

Rump Session

Discussion

Dr. Tetsuo Narita

Invited Speaker

Vortrag

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