IWN 2022

International Workshop on Nitride Semiconductors 2022

Physics-based extraction of trap distribution in AlGaN/GaN HEMTs from stretched exponentials

Characterization

Poster Presentation

Electronic devices

Probing carrier transport and recombination processes in dichromatic GaN-based LEDs – a nonequilibrium Green's function study

Optical devices

Novel Materials and Nanostructures

Reliability of commercial UV-C LEDs for disinfection purposes

UV LEDs : degradation

Abstract Talk

Modeling of TAT-related forward leakage current in InGaN/GaN SQW LEDs based on experimentally-determined defects parameters

Analysis of degradation mechanisms in UVC single QW LEDs through electrical, optical and spectral measurements

Modeling the EQE spectral shape of InGaN-GaN multi-quantum wells solar cells

Hot-electron trapping and electric field redistribution in 0.15 um RF AlGaN/GaN HEMT with single or double layer AlGaN backbarrier

Modelling and characterization

Effects of generation and relocation of defects during the aging process of InGaN-based multi quantum well light emitting diodes

Deep levels effects and on-wafer reliability of 0.15 μm InAlN/GaN and InAlGaN/GaN HEMTs with AlGaN backbarrier for RF applications

Trap parameter extraction and compact modeling of non-ideal dynamic performance in AlGaN/GaN HEMTs

MOS Devices

Salon Rome

Vertical devices I

Session

Chair

Panel discussion

GaN is already now the material of choice for power conversion up to 650 V. Despite a similar breakdown field as SiC, GaN is not compatible for higher voltages up to 10 kV. The figures of merit predict a really strong performance with experimental results lagging. In the rump session, we will discuss what is currently limiting the performance of GaN based power electronics and how to overcome these limits. Additionally, the nitride family also offers a wider range of materials, e.g., AlGaN and AlN with even wider band gaps with breakdown fields surpassing SiC and even diamond. Theoretically these materials could be the next generation semiconductors for power electronics. We will critically discuss the actions that need to be taken to align theoretical expectations with experimental results.<br><br>Panelists include experts in GaN power devices, native substrate growth and preparation, AlGaN and AlN power electronics as well as an intimate knowledge of the industry and their requirements for a successful transfer into the market.

Salon London

What do we need to do to make III-nitrides surpass SiC in power electronics?

Rump Session

Discussion

Defects and reliability in GaN electronics and optoelectronics: challenges and perspectives

Professor Matteo Meneghini

Vorsitz

Plenary Speaker

Vortrag

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