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  • Abstract Talk
  • AT 234

Hot-electron trapping and electric field redistribution in 0.15 um RF AlGaN/GaN HEMT with single or double layer AlGaN backbarrier

Termin

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Salon Rome

Session

Modelling and characterization

Themen

  • Characterization
  • Electronic devices

Mitwirkende

Francesca Chiocchetta (University of Padova / IT), Dr. Zhan Gao (University of Padova / IT), Mirko Fornasier (University of Padova / IT), Nicola Modolo (University of Padova / IT), Dr. Carlo De Santi (University of Padova / IT), Fabiana Rampazzo (University of Padova / IT), Marco Saro (University of Padova / IT), Salvatore Cullaro Carbonaro (University of Padova / IT), Professor Matteo Meneghini (University of Padova / IT), Professor Gaudenzio Meneghesso (University of Padova / IT), Professor Enrico Zanoni (University of Padova / IT), Hervè Blanck (United Monolithic Semiconductors UMS / DE), Hermann Stieglauer (United Monolithic Semiconductors UMS / DE), Daniel Sommer (United Monolithic Semiconductors UMS / DE), Benoit Lambert (United Monolithic Semiconductors UMS / DE), Jan Grünenpütt (United Monolithic Semiconductors UMS / DE), Olof Kordina (SweGaN / SE), Dr. Jr-Tai Chen (SweGaN / SE), Jean-Claude Jacquet (III-V Labs / FR), Cédric Lacam (III-V Labs / FR), Stephane Piotrowicz (III-V Labs / FR)

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