Dr. Jr-Tai Chen

Weitere Beteiligungen

• 11.10.2022

  • Poster Presentation
  • PP 265

  Multi-step temperature growth process optimization of N-polar GaN and its application to HEMT structures

   Characterization, Growth
• 12.10.2022

  09:30 – 09:45 12 Min. 3 Min.

  • Abstract Talk
  • AT 117

  Improve 2DEG confinement in 70 nm AlGaN/GaN HEMTs by reducing the GaN channel thickness in buffer-free heterostructures

   Electronic devices
• 12.10.2022

  • Poster Presentation
  • PP 316

  Anisotropic transport in N-polar GaN/AlGaN/GaN HEMTs grown on off-cut SiC substrates

   Characterization, Growth
• 14.10.2022

  09:00 – 09:15 12 Min. 3 Min.

  • Abstract Talk
  • AT 230

  Anomalous transport properties of the two-dimensional electron gas in GaN-based high-electron-mobility transistor structures

   Characterization, Novel Materials and Nanostructures
• 14.10.2022

  09:00 – 09:15 12 Min. 3 Min.

  • Abstract Talk
  • AT 234

  Hot-electron trapping and electric field redistribution in 0.15 um RF AlGaN/GaN HEMT with single or double layer AlGaN backbarrier

   Characterization, Electronic devices