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Abstract Talk
AT 117

Improve 2DEG confinement in 70 nm AlGaN/GaN HEMTs by reducing the GaN channel thickness in buffer-free heterostructures

Termin

Datum: 12.10.2022

Zeit: 09:30 – 09:45

Redezeit: 12 Min.

Diskussionszeit: 3 Min.

Ort / Stream:

Salon Rome

Session

ScAlN, charge confinement and trapping

Thema

Electronic devices

Mitwirkende

Ding Yuan Chen (SweGaN AB / SE; Chalmers University of Technology / SE), Kai Hsin Wen (SweGaN AB / SE; Chalmers University of Technology / SE), Professor Mattias Thorsell (Chalmers University of Technology / SE), Dr. Martino Lorenzini (SweGaN AB / SE), Professor Hans Hjelmgren (Chalmers University of Technology / SE), Dr. Jr-Tai Chen (SweGaN AB / SE), Professor Niklas Rorsman (Chalmers University of Technology / SE)