Session – Electronic Devices
ScAlN, charge confinement and trapping

Programm

• 08:30 – 09:00 25 Min. 5 Min.

  • Invited Talk
  • IT 30

  What is special about ScAlN? An overview of its structural, mechanical and polarization-induced properties

  • Prof. Dr. Dr. Oliver Ambacher (Albert-Ludwigs-Universität Freiburg / DE)
• 09:00 – 09:15 12 Min. 3 Min.

  • Abstract Talk
  • AT 115

  Charge-trapping flash memory based on AlGaN/GaN/AlGaN double heterostructures

  • Arno Kirchbrücher (RWTH Aachen University / DE)

   Electronic devices, Novel Materials and Nanostructures
• 09:15 – 09:30 12 Min. 3 Min.

  • Abstract Talk
  • AT 116

  Demonstration of Sc0.2Al0.8N HEMT structures with a sheet resistance of 150 Ω/□ and a sheet charge of 5.9x1013 cm-2 with phase pure, metal rich growth

  • Zachary Engel (Georgia Institute of Technology / US)

   Electronic devices, Growth
• 09:30 – 09:45 12 Min. 3 Min.

  • Abstract Talk
  • AT 117

  Improve 2DEG confinement in 70 nm AlGaN/GaN HEMTs by reducing the GaN channel thickness in buffer-free heterostructures

  • Ding Yuan Chen (SweGaN AB / SE)

   Electronic devices
• 09:45 – 10:00 12 Min. 3 Min.

  • Abstract Talk
  • AT 118

  Electric field imaging in AlGaN/GaN high electron mobility transistors grown on AlN substrates

  • Prof. Dr. Julien Pernot (Univ. Grenoble Alpes / FR)

   Characterization, Electronic devices